Abstract
Predominantly (100)-oriented CaBi4Ti4O15 (CBTi) films were fabricated on Pt (111)∕Ti∕SiO2∕Si substrates using a metal organic decomposition method at annealing temperatures ranging from 600to800°C. The growth mode of the predominantly (100)-oriented CBTi films fabricated by the sequential layer annealing method was discussed based on the structure evolution with the annealing temperature. The remanent polarization and coercive field of the CBTi film annealed at 750°C are 38.1μC∕cm2 and 216kV∕cm, respectively. No fatigue can be observed after 109 switching cycles. The remanent polarization of the purely a-axis-oriented CBTi film should be higher than 50μC∕cm2.
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