Abstract
Bi 4 Ti 3 O 12 (BIT) and Hf-doped BIT (BTH) thin films have been fabricated on (111) SrTiO3 substrates with SrRuO3 bottom electrodes by pulsed laser deposition, respectively. X-ray photoelectron spectroscopy investigation revealed that Hf doping would strengthen the oxygen covalent bond to B-site ions, which could consolidate the BO6 octahedral structure in BTH. As confirmed by x-ray diffraction scans, including θ-2θ and Φ scans, both films were highly (104) oriented and showed triple-twin situation. Compared to the BIT films, the BTH films have significantly enhanced electrical properties with 3 times larger remanent polarization (2Pr=45.7 μC/cm2), 0.7 times smaller coercive field (2Ec=184 kV/cm), and better fatigue endurance (11.4% degradation). The difference of ionic radius and the strengthened covalency in BO6 octahedral structure are supposed to be the two aspects resulting in the enhancement of 2Pr value. The improved fatigue properties could be believed to result from the high activation energies of oxygen vacancy caused by Hf doping.
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