Abstract
Bi4Ti3O12-CaBi4Ti4O15 (BT-CBTi) film was fabricated on Pt(111)/Ti/SiO2/Si substrate by the sol-gel method. The intergrowth structure was demonstrated to be obtained both in the film and corresponding powder sample according to x-ray diffraction (XRD) patterns. The good fatigue resistance as well as a strong charge-retaining ability can be obtained in the intergrowth BT-CBTi film. The remanent polarization (Pr) and coercive field (Ec) for BT-CBTi film was about 28 μC cm−2 and 150 kV cm−1 under an electric field of 540 kV cm−1, respectively. The Pr value of purely (100)-oriented BT-CBTi film can be roughly estimated to be higher than 50 μC cm−2 based on both the volume fraction of (100)-oriented grains and the piezoelectric properties. The Pr value of BT-CBTi film is about 50 μC cm−2 under an electric field of 1100 kV cm−1 in predominently (100)-oriented BT-CBTi film. It means that it is reasonable to predict the performance of (100)-oriented BT-CBTi films based on the ferroelectric and piezoelectric properties of the polycrystalline BT-CBTi film. The spontaneous polarization is larger than 80 μC cm−2 under an electric field of 1100 kV cm−1.
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