Abstract
Cu2ZnSn(S,Se)4 (CZTSSe) thin film photovoltaic absorber layers are fabricated by selenizing Cu2ZnSnS4 (CZTS) nanoparticle thin films in a selenium rich atmosphere. The selenium vapor pressure is controlled to optimize the morphology and quality of the CZTSSe thin film. The largest grains are formed at the highest selenium vapor pressure of 226 mbar. Integrating this photovoltaic absorber layer in a conventional thin film solar cell structure yields a champion short circuit current of 37.9 mA/cm2 without an antireflection coating. This stems from an improved external quantum efficiency characteristic in the visible and near-infrared part of the solar spectrum. The physical basis of this improvement is qualitatively attributed to a substantial increase in the minority carrier diffusion length.
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