Abstract
Local surface potential of Cu2ZnSnSe4 thin-films was investigated by Kelvin probe force microscopy. The surface potential profile across grain boundaries (GBs) shows a rise of 200–600 meV at GBs in a Cu-poor and Zn-poor film with 3.8% efficiency, which means positively charged GBs. In contrast, the GBs in a Cu-poor and Zn-rich film with 2% efficiency exhibit lowering of surface potential by 40 meV. The results indicate that GBs of Cu2ZnSnSe4 films play a role for exciton separation and governing defects for high efficiency could be not only CuZn but also VCu as explained theoretical predictions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
