Abstract
In2O3 and 2.5-10 at% Al-doped In2O3 are prepared through a simple solvothermal method, and samples are characterized by a variety of methods to investigate the phase and morphological properties. The gas sensing measurements reveal that Al-doped In2O3 has superior ethyl acetate sensing capability as compared to pure In2O3, with the maximum response value approaching 56.3–100ppm ethyl acetate at 184°C, which is about 2.34 times higher than pure In2O3. In addition, 5 at% Al-doped In2O3 gas sensor is also found to have lower detection limit and better selectivity to ethyl acetate. Hence, Al-doped In2O3 material can be promising for sensing ethyl acetate gas with high performance. Also, the mechanism involved in improving sensing performance of Al-doped In2O3 is discussed.
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