Abstract
A significant improvement in the power conversion efficiency (PCE) and the environmental stability of n-Graphene/p-Si solar cells is indicated through effective n-doping of graphene, using low work function oxide capping layers. AlO x, deposited through atomic layer deposition, is particularly effective for such doping and in addition serves as an antireflection coating and a cell encapsulating layer. It is shown that the related charge transfer doping and interfacial engineering was crucial to achieve a record PCE of 12.5%. The work indicates a path forward, through work function engineering, for further efficiency gains in Gr-based solar cells.
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