Abstract
The rapid development of advanced flexible electronics leads to higher demands on the energy storage performance and spatial adaptability of capacitors. Here, Mn2+ is doped into 0.6(Na0.5Bi0.5)TiO3-0.4Bi(Mg0.5Zr0.5)O3 (0.6NBT-0.4BMZ), which effectively reduces the carrier content by forming defective complexes through the bonding of Mn2+ with oxygen vacancies, while maintaining a relatively high polarizability and enhancing the breakdown strength. The optimal storage performance is demonstrated by the 0.6NBT-0.4BMZ film with a Mn doping amount of 1 mol%. The observed breakdown strength, storage density, and storage efficiency are 2900 kV/cm, 60.2 J/cm3, and 60.3 %, respectively. Furthermore, the films exhibit excellent stability in various temperature ranges (25–205 ℃), frequencies (1–5 kHz), fatigue tests (at 107 charge/discharge cycles), and bending resistance tests (20,000 cycles/radius R ≈ 2 mm). These results indicate that NBT-based film materials hold great promise for future flexible energy storage applications.
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