Enhanced energy storage performance in Sr0.7La0.2Zr0.15Ti0.85O3-modified Bi0.5Na0.5TiO3 ceramics via constructing local phase coexistence

Enhanced energy storage performance of tungsten bronze structured BaNb2O6-modified (Bi0.5Na0.5)TiO3 ceramics

With the development of advanced electrical and electronic devices and the requirement of environmental protection, lead‐free dielectric capacitors with excellent energy storage performance have aroused great attention. However, it is a great challenge to achieve both large energy storage density and high efficiency simultaneously in dielectric capacitors. This work investigates the energy storage performance of sol‐gel‐processed (K,Na)NbO3‐based lead‐free ferroelectric films on silicon substrates with compositions of 0.95(K0.49Na0.49Li0.02)(Nb0.8Ta0.2)O3‐0.05CaZrO3‐xmol% Mn (KNN‐LT‐CZ5‐xmol% Mn). The appropriate amount of Mn‐doping facilitates the coexistence of orthorhombic and tetragonal phases, suppresses the leakage current, and considerably enhances the breakdown strengths of KNN‐LT‐CZ5 films. Consequently, large recoverable energy storage density up to 64.6 J cm−3with a high efficiency of 84.6% under an electric field of 3080 kV cm−1are achieved in KNN‐LT‐CZ5‐5 mol% Mn film. This, to the best of our knowledge, is superior to the majority of both the lead‐based and lead‐free films on silicon substrates and thus demonstrates great potentials of (K,Na)NbO3‐based lead‐free films as dielectric energy storage materials.

High energy storage properties of lead-free Mn-doped (1-x)AgNbO3-xBi0.5Na0.5TiO3 antiferroelectric ceramics

Achieving high energy storage density and excellent stability in BiScO3 modified BaTiO3-based ceramics

Boosting energy storage performance in negative temperature coefficient linear-like dielectrics via composite modulation in the superparaelectric state

Antiferroelectric materials are promising for applications in advanced high-power electric and electronic devices. Among them, AgNbO3-based ceramics have gained considerable attention due to their excellent energy storage performance. Herein, multiscale synergistic modulation is proposed to improve the energy storage performance of AgNbO3-based materials, whereby the tape casting process is employed to improve the breakdown strength and Gd/Mn doping is utilized to enhance the antiferroelectric stability. As a result, a high recoverable energy storage density up to 5.3 J cm-3 and energy efficiency of 67.6% are obtained in Gd/Mn co-doped AgNbO3 ceramic, which shows good temperature stability and frequency stability. These results show that the components and processes proposed in this work provide a feasible method for improving the energy storage performance of AgNbO3-based ceramics.

Energy storage performance of silicon-integrated epitaxial lead-free BaTiO3-based capacitor

Enhanced energy storage performance in Na(1-3x)BixNb0.85Ta0.15O3 relaxor ferroelectric ceramics

Excellent energy storage performance of paraelectric Ba0.4Sr0.6TiO3 based ceramics through induction of polar nano-regions

Simultaneous enhancement of energy storage performance and thermal stability of NaNbO3-based ceramics via multi-scale modulation

The development of dielectric capacitors toward high voltage and high power density requires materials with excellent insulation and energy storage performances. In this work, a polymer dielectric with polyetherimide (PEI) as the matrix and calcium barium zirconate titanate (BZCT) coated by barium titanate fiber (BT) as the filler (BZCT@BT) was constructed. The (0.5%-10% BZCT@BT/PEI) polymer dielectric has an excellent discharge energy density (Ue) of 6.66 J/cm3 and maintains an advanced charge/discharge efficiency (η) of 93.29% when the BT content was 0.5% and the BZCT particle content was 10%. The addition of BZCT endows the polymer dielectric with a higher relative dielectric constant (εr), while BT, maintaining a lower εr than BZCT, could reduce the electric field (E) distortion caused by the dielectric mismatch between PEI and BZCT. Oriented fiber fillers increase the breakdown strength of the polymer dielectric, ultimately increasing the performance of energy storage. A new strategy for the design of energy storage polymer dielectrics was provided by this work.

Dielectric materials with excellent energy storage performance are urgently needed in advanced electrical power systems. We have reported that Mn2+‐doped SrTiO3 thin films have high energy storage density. However, the thin films exhibit fat polarization‐electric field hysteresis loops with high hysteresis, which is not conducive to greater energy storage performance. In this work, the Ca2+‐doped Sr1‐xCaxTi0.99Mn0.01O3 thin films are fabricated to construct slim polarization‐electric field hysteresis loops with low hysteresis for obtaining excellent energy storage performance. Because Ca2+ can break the long‐range ferroelectric order of SrTi0.99Mn0.01O3, the domain size decreases and the coupling of domains weakens, ultimately leading to low hysteresis. Moreover, doping Ca2+ can induce distortion of the octahedral [TiO6] to form local polarization regions. When doped an appropriate amount of Ca2+, local lattice distortion plays an important role in polarization behavior, which helps to enhance polarization. Meanwhile, the Ca2+‐doped thin films also possess good insulation. Finally, the higher energy storage density of 63.9 J cm‐3 is achieved in the Sr0.9Ca0.1Ti0.99Mn0.01O3 thin film. When the electric field is less than 4000 kV cm‐1, the energy storage efficiency remains above 70%. Simultaneously, a wide working temperature range from ‐100℃ to 100℃ is also obtained.

Antiferroelectric materials are promising to be used for power capacitive devices. To improve the energy storage performance, solid-solution and defect engineering are widely used to suppress the long-range order by introducing local heterogeneities. However, both methods generally deteriorate either the maximum polarization or breakdown electric field due to damaged intrinsic polarization or increased leakage. Here, we show that forming defect-dipole clusters by A-B site acceptor-donor co-doping in antiferroelectrics can comprehensively enhance the energy storage performance. We took the La-Mn co-doped (Pb0.9Ba0.04La0.04)(Zr0.65Sn0.3Ti0.05)O3 (PBLZST) as an example. For co-doping with unequal amounts, high dielectric loss, impurity phase, and decreased polarization were observed. By contrast, La and Mn in an equal amount of co-doping can significantly improve the overall energy storage performance. An over 48% increasement in both the maximum polarization (62.7 μC/cm2) and breakdown electric field (242.6 kV/cm) was obtained in 1 mol % La and 1 mol % Mn equally co-doped PBLZST, followed by a nearly two-time enhancement in Wrec (6.52 J/cm3) compared with that of the pure matrix. Moreover, a high energy storage efficiency of 86.3% with an enhanced temperature stability over a wide temperature range can be achieved. The defect-dipole clusters associated with charge-compensated co-doping are suggested to contribute to an enhanced dielectric permittivity, linear polarization behavior, and maximum polarization strength compared with that of the unequal co-doping cases. The defect-dipole clusters are suggested to couple with the host, leading to a high energy storage performance. The proposed strategy is believed to be applicable to modify the energy storage behavior of antiferroelectrics.

Enhanced energy storage performance in Ag(Nb,Ta)O3 films via interface engineering

Lead-free medium-entropy (Na0.47(1-x)Bi0.47(1-x)Ba0.06(1-x)Sr0.7xNd0.2x)TiO3 relaxor ceramics with robust energy-storage performance