Abstract

It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed laser deposition method, it is discovered that the nanocrystals of Si and Ge grow in the (100) and (111) directions after annealing or electron beam irradiation. The enhanced PL peaks with multi-longitudinal-mode are measured at room temperature in the super-lattice of Si-Ge nanolayer quantum system on SOI.

Highlights

  • Spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level

  • E quantum dots (QDs) pumping and quasi-direct-gap band has been provided to explain the experimental results, Rwhere the shorter lifetime of QDs is suitable for pumping lifetime of the localized states is suitable for inverse of population [12, 13]

  • ARTICLE Fig. 1 Fabrication system with pulsed laser depositing (PLD) device, in which the Si-Ge layer quantum system and super-lattice structures are prepared after annealing RETRACTED Fig. 2 Transmission electron microscopy (TEM) image of Ge crystal in the (111) direction prepared by using PLD method and its FFT pattern

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Summary

Introduction

Spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level. E quantum dots (QDs) pumping and quasi-direct-gap band has been provided to explain the experimental results, Rwhere the shorter lifetime of QDs is suitable for pumping lifetime of the localized states is suitable for inverse of population (microsecond order) [12, 13].

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