Abstract
AbstractWe report the structure and emission properties of ternary (In,Ga)N nanowires (NWs) embedded with self‐assembled quantum dots (SAQDs). InGaN NWs are fabricated by the reaction of In, Ga and NH3 via a vapor–liquid–solid (VLS) mechanism, using Au as the catalyst. By simply varying the growth temperature, In‐rich or Ga‐rich ternary NWs have been produced. X‐ray diffraction, Raman studies and transmission electron microscopy reveal a phase‐separated microstructure wherein the isovalent heteroatoms are self‐aggregated, forming SAQDs embedded in NWs. The SAQDs are observed to dominate the emission behavior of both In‐rich and Ga‐rich NWs. Temperature‐dependent photoluminescence (PL) measurements indicate relaxation of excited electrons from the matrix of the Ga‐rich NWs to their embedded SAQDs. A multi‐level band schema is proposed for the case of In‐rich NWs, which showed an anomalous enhancement in the PL peak intensity with increasing temperature accompanies with red shift in its peak position.
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