Abstract
AbstractHigh emission efficiency of InGaN films were obtained with Si doping, and the influence of Si doping on structural and optical properties of InGaN epilayers with different Si concentration were investigated in detail by means of high‐resolution X‐ray diffraction (HRXRD), scanning electron microscope (SEM), Cathodoluminescence (CL) and photoluminescence(PL). V‐defects were observed on the surface of InGaN films, and further investigation by CL showed that V‐defects act as nonradiative center, which lower the emission efficiency of InGaN. Meanwhile, it was found that Si doping could improve the crystal quality of InGaN and suppress the formation of V‐defects in InGaN, and hence enhance the emission efficiency of InGaN. One possible mechanism of influence of Si doping on the formation of V‐defects in InGaN was also proposed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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