Enhanced electronic-transport modulation in single-crystalline VO2 nanowire-based solid-state field-effect transistors

Tingting Wei,Tsuyoshi Sekitani,Masashi Chikanari,Teruo Kanki,Takafumi Uemura,Hidekazu Tanaka

doi:10.1038/s41598-017-17468-x

Abstract

Field-effect transistors using correlated electron materials with an electronic phase transition pave a new avenue to realize steep slope switching, to overcome device size limitations and to investigate fundamental science. Here, we present a new finding in gate-bias-induced electronic transport switching in a correlated electron material, i.e., a VO2 nanowire channel through a hybrid gate, which showed an enhancement in the resistive modulation efficiency accompanied by expansion of metallic nano-domains in an insulating matrix by applying gate biases near the metal-insulator transition temperature. Our results offer an understanding of the innate ability of coexistence state of metallic and insulating domains in correlated materials through carrier tuning and serve as a valuable reference for further research into the development of correlated materials and their devices.

Highlights

As a representative transition metal oxide with correlated electrons, vanadium dioxide (VO2), has attracted considerable research attention because of its versatile properties
The enhancement in the resistance modulation is derived from expansion of metallic nano-frictions in an insulating matrix due to carrier accumulation driven by applying an electric field
This work begins with synthesis of epitaxial single-crystal VO2 nanowires using the ultraviolet-nanoimprint lithography (UV-nanoimprint photolithography (NIL)) technique

Summary

Introduction

As a representative transition metal oxide with correlated electrons, vanadium dioxide (VO2), has attracted considerable research attention because of its versatile properties. In our previous report using VO2 thin-film-based FETs, a high-k inorganic Ta2O5/organic polymer parylene hybrid solid gate insulator[22,26,27] was demonstrated, leading to reversible and prompt electrical-transport modulation owing to reduced interface deterioration and a high dielectric constant in the bi-layered gate insulator. As another new approach, the use of nanostructured channels is promising because the MIT sensitivity is highly responsive to sizes comparable in scale to the electronic phase domains, resulting in a dramatic resistance jump due to electronic avalanche effects[28,29,30]. The enhancement in the resistance modulation is derived from expansion of metallic nano-frictions in an insulating matrix due to carrier accumulation driven by applying an electric field

Methods

Results

Conclusion