Abstract
AbstractThe temperature dependence of the current-voltage-luminescence characteristics in organic light-emitting diodes (OLEDs) withvarying thickness of LiF layers are studied to understand the mechanism of the enhanced electron injection by inserting a thininsulating LiF layer at the tris(8-hydroxyquinoline) aluminum (Alq 3 )–Al interfaces. At room temperature, the LiF/Al cathodeenhances the electron injection and the quantum e†ciency (QE) of the electroluminescence (EL), implying that the LiF thin layerlowers the electron-injection barrier. However, at low temperatures it is observed that the injection-limited current dominates andthe barrier height for the electron injection in the device with LiF/Al appears to be similar with the Al only device. Thus, our resultssuggest that at low temperatures the insertion of LiF does not cause a significant band bending of Alq 3 or reduction of the Al workfunction. O 2001 Elsevier Science B.V. All rights reserved. PACS: 78.60.Fi; 85.60.JbKeywords: Organic light-emitting diodes; Electroluminescence; Al/LiF electrodes
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