Abstract
An enhancement of the electroluminescence (EL) from nanoscale siliconp+–n junctions made with an anodic aluminum oxide (AAO) pattern wasdemonstrated. The nanoporous AAO pattern with a pore density of1.4 × 1010 cm−2 and a porediameter of 50 ± 10 nm was fabricated by the two-step anodic oxidation methodon a n-type silicon wafer. The nanoscale AAO patterned Sip+–n junctions achieved an EL enhancement factor up to about 5 compared to the unpatterned Sip+–n junctions. The enhancement may originate from a reduction of nonradiativerecombination due to partial passivation of the Si surface by the AAO pattern andimprovement of the light extraction due to surface nanotextures.
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