Abstract
Here in, we have fabricated a composite of SiC and g-C3N5 to form a noble-metal-free heterostructure as SiC/g-C3N5 for electrochemical HER activity. More than a few characterization techniques were investigated for their structural properties, such as the XRD, UV- DRS, FT-IR, FE-SEM, HR-TEM, and XPS measurements respectively. The HER reaction of SiC/g-C3N5 heterostructure with an overpotential obtained from Tafel slope of 81 mV/dec vs RHE at 10 mA/cm2 which is much better than that of the pristine SiC material. This work entitles that the effective approach for the rational design of g-C3N5-based electrocatalysts, for future developments in metal-free electrocatalysts.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
