Abstract
(100)-oriented Pb(0.90−x)BaxLa0.10Zr0.90Ti0.10O3 (x=0, 0.02, 0.05 and 0.11) antiferroelectric thick films were deposited on LaNiO3/Si (100) substrates by the sol-gel process. The influences of Ba2+ content on the dielectric properties, electrocaloric effect (ECE), energy-storage performance and leakage current were systematically investigated. With Ba2+ content increasing, the temperature (Tm) corresponding to the maximum dielectric constant of the thick films was decreased, while their diffuseness was increased. The maximum ECE ∆T=18.1°C was obtained in the thick film with x=0.05 at room temperature under ∆E=700kV/cm. The maximum energy storage density of 42.3J/cm3 and the corresponding efficiency of 68% was achieved in the film with x=0.11, companied by a power density of 0.53MW/cm3, due to its high breakdown strength. In addition, a small leakage current density (<10−5A/cm2) were attained in these films at room temperature. In conclusion, we believe that this kind of antiferroelctric thick film is a potential candidate for applications in solid cooling devices and the energy-storage systems.
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