Abstract
An antireflective coating made by TiO2 nanocone array is designed on an ultrathin multilayer GaAs substrate (the thickness of GaAs is 300 nm). The intrinsic light trapping, carrier recombination and photoconversion are simulated by a complete photoelectric simulation. The results show that the optimized light trapping design can enhance the electromagnetic resonance in active layer and lead to an extraordinary enhancement of both absorption and power conversion capabilities in GaAs solar cell. The short-circuit current density increases by 51.12%, from 12.01 mA/cm2 to 18.15 mA/cm2 and power conversion efficiency increases by 52.83%, from 11.00% to 16.81% compared to the reference benchmark.
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