Abstract
We report in this letter the results of experiments comparing the electrical properties of low-temperature epitaxial silicon deposited by plasma-enhanced chemical vapor deposition (PECVD) and ultralow pressure chemical vapor deposition (U-LPCVD). Diode characteristics indicate a strong dependence of the electrical quality of the PECVD films on the plasma power. The data indicate that, in contrast to a purely thermal deposition (the U-LPCVD films), a low-power PECVD deposition (2.5–5 W) improves the electrical quality of the epitaxial layers and lowers the minimum epitaxy temperature. A high-power plasma (20 W), however, degrades the electrical characteristics in comparison to a strictly thermal deposition.
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