Abstract
Lead zirconate titanate Pb(Zr0.2Ti0.8)O3 (PZT) thin films were deposited on Nb-doped SrTiO3 (NSTO) substrates by a sol-gel method and then crystallized by microwave irradiation. The effects of microwave irradiation on the electrical properties of PZT films were investigated in comparison with conventional annealing. The PZT films crystallized by microwave irradiation at 550 °C for only 10 min exhibited better electrical properties than those obtained by conventional heating at 550 °C for 45 min. The theoretical analysis based on the Schottky emission model reveals that microwave irradiation can increase the concentration of oxygen vacancies at the PZT/NSTO interface, thus reducing the effective built-in potential and depletion layer width at the PZT/NSTO interface to make PZT films exhibit better ferroelectric properties.
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