Abstract
Herein, solution‐processed indium gallium zinc oxide (IGZO) thin‐film transistors (TFTs) with a bilayer structure are investigated by embedding an ultrathin layer of indium zinc oxide (IZO) between the gate dielectric and IGZO film. The optimized IGZO/IZO bilayer TFTs exhibit a high field‐effect mobility (μFE) of 8.3 cm2 V−1 s−1, and the bias‐stress stability of the bilayer TFTs is greatly improved compared with that of the single‐layer IGZO devices. In addition, temperature‐dependent mobility and VT are investigated to reveal the trap distribution in the bilayer IGZO/IZO and single‐layer IGZO TFTs. Moreover, low‐voltage bilayer TFTs with a high mobility of 10.4 cm2 V−1 s−1 are demonstrated.
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