Abstract
The electric breakdown field of CaCu3Ti4O12 ceramics has been enhanced by one order, i.e. from the conventional 1.0–2.0 kV cm−1 to 21 kV cm−1. Such great enhancement, associated with lower and relatively flat dielectric loss at low frequency, has arisen from optimum Al2O3 addition and sintering process. It is indicated that the addition of Al2O3 can affect the grain growth and the grain boundary characteristics via the distribution of a secondary phase of CuAl2O4, which is confirmed by x-ray diffraction and electron dispersive spectroscopy. The performance of grain boundary can be described well by the Schottky barrier model. It is found that the activation energy of hopping conduction at grain boundary is increased from 0.60 to 0.81 eV due to the secondary phase, which consequently leads to enhanced breakdown field.
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