Abstract

Solar cells fabricated by piezoelectric semiconductor materials, such as GaN, AlN, and CdS, enable better performance due to piezo-phototronic modulation. Recent experiments have revealed the possibility to further improve the energy conversion efficiency of perovskite solar cells with a gallium nitride (GaN) substrate as the electron transport layer. In this study, a perovskite piezo-phototronic solar cell with a GaN layer has been investigated theoretically. The open-circuit voltage, current–voltage curves, fill factor, efficiency of power conversion, and power of maximum output under applied strains are obtained. While the applied strain is 1%, the open-circuit voltage has been improved by 3.8%. This design can offer a practical approach to produce high-efficiency perovskite solar cells.

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