Enhanced domain switching contributing to large strain response in (Bi0.5Na0.5)TiO3–SrTiO3 lead-free thin films

Abstract

The acquisition of lead-free piezoelectric films with large strain is the key factor in promoting micro-actuator development. A lead-free compound, Bi0.5Na0.5TiO3, exhibits extensive potential in achieving a large strain response and a high inverse piezoelectric coefficient. In this work, (1-x)Bi0.5Na0.5TiO3-xSrTiO3 (BNT-100xST, x = 0.1, 0.2, 0.25) solid solution thin films have been prepared using the chemical solution deposition method. The dielectric nonlinearity and ferroelectric properties of BNT-ST thin films have been systematically studied to investigate the domain wall motion in the films. The most significant domain wall motion was obtained in BNT-20STST thin film, in which film a large strain of 0.89 % was obtained. In addition, the relation between structure and properties as a function of temperature was studied by the temperature-dependent dielectric properties and Raman spectra analysis.