Enhanced direct-gap light emission from Si-capped n+-Ge epitaxial layers on Si after post-growth rapid cyclic annealing: impact of non-radiative interface recombination toward Ge/Si double heterostructure lasers: erratum.

Abstract

We report an error in Fig. 13(a) of our article [Opt. Express25, 21286 (2017)], and the correction is presented. Typographical errors in the text are also corrected.