Abstract
Abstract An enhanced diffusion of boron and phosphorus in silicon during hot substrate ion implantation was interpreted from the increase of diffusion coefficient in the substrate. Distribution of excess vacancies generated during hot implantation was calculated by solving diffusion equation for density of vacancies. Experiments were carried out in following categories. (Case 1): Hot implantation of neutral ions, such as H and Ar ions into boron and phosphorus doped surface layer of substrate silicon. (Case 2): Hot implantation of boron and phosphorus ions into substrate. Excess diffusion length and carrier distribution profiles were measured and compared with the calculated results of simple model. Crystal perfectness observed through back scattered He ions indicated favorable results.
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