Abstract
We have heteroepitaxially deposited pure and TiO2-doped Ba0.6Sr0.4TiO3(BST-0.4) films on (001)-oriented MgO substrates using pulsed-laser deposition. By optimizing microstructures, we have successfully increased the dielectric nonlinearity and decreased the dielectric loss of BST films. By inserting a very thin Ba1-xSrxTiO3 (x=0.1–0.7) interlayer between the MgO substrate and the main layer of BST-0.4, we are able to manipulate strain states and dielectric properties of BST-0.4 films. In addition, we have systematically compared the dielectric properties of pure and TiO2-doped BST-0.4 films.
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