Abstract
Enhanced device characteristics of InGaAs/AlGaAs MOS-HEMTs with HfO2/Al2O3 stacked dielectrics by using separate RF sputtering and ozone water oxidization are investigated in this work. Improved interfacial quality is verified by 1/f spectra and C-V measurement. k values of the stacked HfO2/Al2O3 are extracted to be 21.5/9.2, respectively, and the resulted effective oxide thickness (EOT) is 5.15 nm. Excellent switching characteristics of low substhreshold slope (SS) of 70 mV/dec and high IDS on-off ratio of up to 6 orders are achieved. The present MOS-HEMT has shown comprehensive improvements in intrinsic voltage gain (AV ), high frequencies, minimum noise figure (NFmin ), output power (Pout ), and power-added efficiency (PAE) performances. Besides, hgh-temperature stability in maximum extrinsic transconductance (gm, max ), maximum IDS (IDS, max ), and gate-drain breakdown voltage (BVGD ) characteristics are also obtained. The present MOS-HEMT design is promising for high temperature and power-switching MMIC applications.
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