Abstract
Large, unexpected shifts in the current-voltage (IV) characteristics of commercial power MOSFETs irradiated with heavy ions have been observed. The shifts can be more than sixty-five times larger than the shifts resulting from total dose irradiation with gamma rays or electrons, and are shown to strongly depend on both the irradiation bias and the ion linear energy transfer (LET). These large shifts are a significant concern for devices intended to operate in low power space applications because it is shown that they can lead to off-state leakage currents greater than 1 A. The data are consistent with the formation of parasitic transistors resulting from the microdose deposited in the gate oxides of these devices by the heavy ions. These results have significant implications for hardness assurance testing of MOS devices for use in space.
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