Abstract
Extremely large crystal grains are obtained by bromine doping in electrodeposited Cu2O on indium tin oxide (ITO) substrate through an acetate bath. The grains are as large as 10,000μm2 in area, or ~100μm in linear dimension, while the film is only 1–5μm thick. The enhanced grain size is explained by the effect of over-potential for the Cu2+/Cu+ redox couple on nucleation density of Cu2O on ITO substrate. The over-potential is a function of several deposition conditions including solution pH, deposition potential, deposition temperature, bromine precursor concentration, and copper precursor concentration. In addition, undoped Cu2O displays a high resistivity of 100MΩcm. Bromine doping in Cu2O significantly reduces the resistivity to as low as 42Ωcm after vacuum annealing. Br-doped Cu2O shows n-type behavior.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
