Abstract
This brief presents a nanoscale low-voltage partially depleted silicon-on-insulator (SOI) structure with improved electrical performance. The brain of the proposed structure is a dual tunnel diode (DTD) composed of a heavily doped p-type L-shaped trench. The accumulated holes are effectively released by the tunnel current of DTD, thus reducing the critical kink effect. Compared with a conventional SOI, the proposed structure is considered as an efficient rival in nanoscale-integrated applications.
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