Abstract
Vertical double-gate (DG) FinFETs fabricated on SOI wafers show good gate control, reasonable threshold voltage and high carrier mobility despite the absence of the top-gate. The 3D coupling effect between the two lateral-gates and the back-gate is investigated based on experimental and simulation results. We compare DG and triple-gate FinFETs with various fin widths. Front-channel characteristics are easily tuned by applied bias at the back-gate if the fin is not too narrow. We highlight that vertical DG FinFET is more appropriate device for dynamic threshold voltage adjustment than triple-gate FinFET. An analytical model is proposed to quantify the coupling effect in DG FinFET by solving 2D Poisson equation. The body potential profile and coupling effect are modeled. A very good agreement is obtained between experiments, 3D simulations and the proposed model.
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