Enhanced conductivity of tunnel junctions employing semimetallic nanoparticles through variation in growth temperature and deposition

Abstract

We report ErAs nanoparticle-enhanced tunnel junctions grown on GaAs with low specific resistances (<2×10−4 Ω cm−2), approximately tenfold lower than previous reports. A reduction in specific resistance was achieved by modifying the ErAs nanoparticle morphology through the molecular beam epitaxial growth conditions, particularly lower growth temperatures. A further investigation of the variation in tunnel junction resistance with the amount of ErAs deposited and growth temperature shows that nanoparticle surface coverage may not be the only factor determining tunnel junction resistance.