Enhanced conductivity of infrared transparent Bi2Se3 thin films as anti-interference coatings for infrared detectors

Abstract

Infrared transparent conductive coatings are extensively utilized in both military and civilian infrared detectors due to their superior infrared transmission and electromagnetic shielding properties. It is a major scientific challenge to find a solution to the contradiction between high transmittance and low conductivity in the area of wide-band infrared transparent conductive film research. This study utilized new material systems and film preparation technologies to clarify the problem. A higher c-axis preferred orientation infrared transparent conducting Bi2Se3 thin film on a p-Si (111) substrate was developed using plasma-enhanced chemical vapor deposition (PECVD) technology. At room temperature, the film exhibited n-type conductivity, with high surface mobility of 2565 cm2/V·s and low surface resistivity of 2.6 × 10−5 Ω cm. In the mid-IR and far-IR regions, the produced Bi2Se3 thin film displayed transparency of 90% and 80%, respectively. To the best of our knowledge, this n-type conductive thin film created using chemical vapor deposition is the best IR-transparent thin film to date. Using this film, a Bi2Se3/p-Si heterojunction diode with a maximum voltage of 0.7 V was created. Young's modulus and hardness were determined to be 80 ± 5.5 GPa and 15 ± 2.2 GPa, respectively, for the film. It demonstrates the film's resistance to wear and deformation. The findings imply that Bi2Se3 film may be used as an anti-interference coating for infrared detectors and other optoelectronic devices throughout a wide wavelength range, from the mid-IR to the far-IR, due to its good optical transparency and electrical conductivity.