Abstract
Significant enhancement in the electrical conductivity of Ce0.9Gd0.1O2−δ (CGO) thin films (250 and 500 nm) deposited on MgO(001) substrate is observed by introducing ∼50 nm thin SrTiO3 buffer layer film. Introduction of the buffer layer is found to form epitaxial films, leading to minimal grain boundary network that results in a free conduction path with near-zero blocking effects perpendicular to current flow. The in-plane conductivity measurements confirm increase in conductivity with increase in compressive strain on CGO films.
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