Abstract
A silicon carbide insulated-gate bipolar transistor (SiC IGBT) structure is proposed and investigated with TCAD simulations. The proposed SiC IGBT features a deep current storage layer and a floating p-grid. Compared to the conventional SiC IGBT, the current storage layer significantly improves conductivity modulation in the device, and results in improved conduction characteristics (i.e. lower VON). However, a mere deep CSL leads to an appreciable degradation in the device breakdown voltage (BV). The floating p-grid in the proposed IGBT effectively clamps this rise of electrical field, and thus achieves an uncompromised BV. Detailed study reveals that the alignment of the p-grid to the top structure does not have obvious influence on the device performance, which makes the structure easy to implement. Switching characteristics of the IGBTs are also studied, and the EOFF-VON trade-off of the proposed SiC IGBT is much better than the conventional IGBT.
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