Abstract

Electroluminescence (EL) from Sibased organic microcavity has firstly been reported in the literature. The microcavity is made up of the central active multilayers sandwiched between a silver film and a porous silicon Bragg reflector (PSDBR), formed by electrochemical etching of p+Si substrate in the electrolyte of HF: C2H5OH:H2O. The central active multilayers consist of Al (1 nm) / LiF (05 nm) / Alq3 / Alq3: DCJTB / NPB / CuPc / ITO / SiO2. The reflectivity (relative to an Al mirror) of the PSDBR is up to 99%, and the stopband is about 160 nm wide. Resonant cavity mode appears as a tip in the reflectivity spectrum of the Sibased organic multilayer films, indicating that the Sibased organic multilayer structure is indeed a microcavity. The peak widths of the EL spetra are greatly reduced from 70 nm to 12 nm as compared with those measured from noncavity structures. Note that the EL emission from the cavity devices is singlemode, and the offresonant optical modes are highly suppressed. Moreover, an increase of a factor of about 4 of the resonant peak intensity is observed. In addition, the currentbrightnessvoltage characteristics and the effect of parameters on the lifetime of the cavity devices are also discussed. The present technique for obtaining enhanced EL emission from Sibased organic microcavity may also be another novel effective method for realizing allSibased photonic devices and optoelectronics device integration.

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