Enhanced charge storage capability of (Bi2O3)0.4(ZrO2)0.6 charge trapping layer in nanocrystal memory devices

Abstract

A structure of p-Si/Al2O3/(Bi2O3)[Formula: see text](ZrO2)[Formula: see text](BZO)/Al2O3/Pt has been fabricated as Nanocrystal Charge Trapping Memory (NCTM), where the double nanocrystals (NCs) of Bi2O3 and ZrO2 generated in BZO charge trapping layer (CTL) through rapid temperature annealing (RTA). A large memory window (MW) of [Formula: see text]8.6[Formula: see text]V and high defect traps of [Formula: see text][Formula: see text]cm[Formula: see text] were obtained at a low sweeping voltages of [Formula: see text]8[Formula: see text]V after 800∘C for 90[Formula: see text]s in O2 ambient. The devices of different RTA conditions were investigated to analyze the process of NCs traps formation by the X-ray diffraction and X-ray photoelectron spectroscopy. Excellent retention characteristics of the room temperature were observed after 104[Formula: see text]s because of the deep defect traps and high quantum wells between CTL and tunneling oxide layer (TOL).