Abstract
AbstractThe doped organic/organic p–n heterojunctions have been applied as charge generation structure (CGS) in tandem organic light emitting diodes (TOLEDs). It is found that the field‐induced charge generation takes place more efficiently at the interface between Li2CO3 n‐doped bathocuproine (BCP:Li2CO3) and MoO3 p‐doped 4,4′‐N,N′‐dicarbazole‐biphenyl (CBP:MoO3) than at the interface between BCP:Li2CO3 and MoO3 p‐doped 4,4‐bis[N‐1‐naphthyl‐N‐phenylamino]biphenyl (NPB:MoO3). It is because the process of electrons tunneling through the depletion zone from the highest occupied molecular orbit (HOMO) of CBP:MoO3 to the lowest unoccupied molecular orbit (LUMO) of BCP:Li2CO3 is more efficient than that from the HOMO of NPB:MoO3 to the LUMO of BCP:Li2CO3. Compared to the TOLED using the conventional CGS of 10‐nm BCP:Li2CO3/20‐nm NPB:MoO3, the one using the CGS of 10‐nm BCP:Li2CO3/10‐nm CBP:MoO3/10‐nm NPB:MoO3 shows increased device performance. In addition, the interconnecting property of CGS of 10‐nm BCP:Li2CO3/x nm CBP:MoO3/20 − x nm NPB:MoO3 shows a strong dependence on the thickness of CBP:MoO3. We provide a new insight on optimizing Ohmic loss in the CGSs, useful for improving the performance of TOLEDs.
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