Enhanced capability improvement using OPC pattern generation at laser lithography

Abstract

We have developed next generation photmasks with a variety of method and approach including new material, machines and technology. Because enhanced resolution and pattern fidelity are required rapidly in photomask for coping with further advances in optical lithography. Specially Laser Lithography, Alta3500 has low butting error, fast throughput and registration but has a weak point as corner rounding, CD linearity and ID bias against minimum MEEF (Mask Error Enhancement Factor) acquisition and enhanced pattern printability. But we can not help feeling much cost burden and worse productivity problem in the process of advanced photomasks development. Therefore we have to always consider low cost under high precision technology with current machine and material. We need to extend Alta3500 productivity for advanced device and a variety of device types. So we approached Optical Proximity Correction (OPC) among several candidates for helping that kinds of requirement. And we selected Rule Based OPC for helping fast application of correction rule and low mask complexity. We evaluated mainly Serif and Jog pattern for acquiring corner rounding, CD linearity and ID bias improvement at Alta3500. And we made a conclusion that Alta3500 can extend to 0.15(mu) Logic fabrication with implementation of OPC pattern generation. In this paper, details of OPC effects and application for 0.15micrometers devices will be further discussed.