Abstract
A novel device structure was fabricated with an inorganic SiO 2 layer inserted between hole-transporting and electron-transporting layer. In device indium-tin oxide (ITO)/poly [2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylenevinylene](MEH-PPV)/tris-(8-hydroxyquinoline) aluminum (Alq 3)/Al, the recombination zone lies in MEH-PPV layer, but in ITO/MEH-PPV/SiO 2/ Alq 3/Al (device A) , the recombination zone moves to Alq 3 layers. In another device ITO/N,N′-bis-(1-naphthyl)-N, N′-diphenyl-1,1′-biphenyl-4-4′-diamine (NPB)/Alq 3/LiF/Al, the brightness and efficiency were enhanced by inserting SiO 2 between NPB and Alq 3 layers, and it results from an improved balance of holes and electrons. Our experimental results demonstrate that the SiO 2 layer acts as not only a buffer layer but also an electron-blocking layer in these devices.
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