Abstract
ABSTRACTIn this paper, B diffusion in Si with BF2-implanted CoSi2 as a diffusion source has been studied using SIMS analysis. The concentration-dependent diffusivity of B in single crystal Si is obtained by Boltzmann-Matano analysis. The data show that the B diffusivity in single crystal Si is more than one order of magnitude higher than the published data where a conventional B diffusion source (BN or B2H2) is used. Anomalous concentration dependence of the B diffusivity in Si for ultra-shallow B SIMS profiles was also observed. Possible physical mechanisms which involve implant damage in the Si substrate, the generation of point defects such as Si vacancies and interstitials during silicide formation, and B-defect interactions are discussed.
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