Abstract
ZnO Nanocaves are grown on p-type silicon substrate by two-step thermal oxidation Zn films. The samples are characterized by X-ray diffraction, scanning electron microcopy and photoluminescence. We observe that the band-gap emission can be great improvement while the defects emission is suppressed to noise level after the ZnO Nanocaves annealed in nitrogen ambient at 600°C for 1h. The improvement of crystalline quality, Au nanoparticles and ZnO Nanocaves layer should responsible for the giant enhancement of band-gap emission and the disappearance of defects emission. The results indicate that the ZnO Nanocaves have great potential applications in optoelectronics such as laser emitting devices, laser diodes and spintronics.
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