Abstract
We have investigated the low temperature of Au induced lateral crystallization of electron irradiated amorphous Ge on SiO2/Si substrate. The reduction of the critical annealing time to cause the Au induced lateral crystallization is realized by high energy electron irradiation. In addition, the lateral crystallization region of the sample with electron irradiation has high crystalline quality as well as the sample without electron irradiation. We have speculated that the Au induced lateral crystallization of amorphous Ge on SiO2/Si substrate was enhanced by electron irradiation, due to the introduction of point defects into amorphous Ge able to diffuse easily of Au atoms.
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