Abstract
Temperature and time dependent Hg-annealing studies for arsenic activation have been carried out on As-doped molecular beam epitaxy HgCdTe eitherin situ or by ion implantation to determine the extent of arsenic activation in the single layer. Enhanced As diffusion and activation in double layer heterostructures have also been investigated to further our understanding of the effects on zero bias resistance-area product (RoA) and quantum efficiency. The results show that the arsenic activation anneal is limited by Hg self-diffusion into the HgCdTe epilayer. Using this arsenic activation process for eitherin situ doped arsenic or implanted arsenic, high performance p-on-n double layer heterostructure photodiodes have been demonstrated on both mesa and planar device structures.
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