Enhanced Anisotropic Effective g Factors of an Al0.25Ga0.75N/GaN Heterostructure Based Quantum Point Contact

Abstract

Gate-defined quantum point contacts (QPCs) were fabricated with Al0.25Ga0.75N/GaN heterostructures grown by metal-organic chemical vapor deposition (MOCVD). In the transport study of the Zeeman effect, greatly enhanced effective g factors (g*) were obtained. The in-plane g* is found to be 5.5 ± 0.6, 4.8 ± 0.4, and 4.2 ± 0.4 for the first to the third subband, respectively. Similarly, the out-of-plane g* is 8.3 ± 0.6, 6.7 ± 0.7, and 5.1 ± 0.7. Increasing g* with the population of odd-numbered spin-splitted subbands are obtained at 14 T. This portion of increase is assumed to arise from the exchange interaction in one-dimensional systems. A careful analysis shows that not only the exchange interaction but the spin-orbit interaction (SOI) in the strongly confined QPC contributes to the enhancement and anisotropy of g* in different subbands. An approach to distinguish the respective contributions from the SOI and exchange interaction is therefore proposed.