Enhanced ambipolar charge transport in staggered carbon nanotube field-effect transistors for printed complementary-like circuits

Abstract

Semiconducting single-walled carbon nanotubes (semi-SWNTs) are attractive as they can be used enable high-performance nano-electronic devices. We report the enhanced ambipolar charge transport characteristics of the semi-SWNT field-effect transistors (FETs) based on a top-gated staggered device structure. SWNTs were selectively dispersed in non-polar organic solvents and sorted by a π-conjugated polymer wrapping method. The sorted semi-SWNTs solution was used simply to form a well-percolated CNT-network, and the top-gate and bottom-contact FETs showed relatively high and equivalent electron and hole mobilities with very high on/off-current ratios and steep subthreshold slopes. The equivalent ambipolar charge transport behavior of semi-SWNTs was used to demonstrate a reliable complementary-like electronic circuits. The inverters showed a good switching threshold near the ideal point at half the driving bias, high gain, low hysteresis, and stability under repeatable operating conditions. They can thus be broadly applied as a fundamental circuit element in printed and flexible electronics.