Abstract
The surface of silicon wafer was treated with F2 gas at 25 °C for 10–120 min. The surface roughness (Ra) of silicon fluorinated for 120 min was 7 times larger than that (3.2 nm) of untreated silicon. Also, the water contact angle of fluorinated silicon decreased to 7°. The adhesion strength of Ni metal deposited on the silicon substrate could be enhanced by surface fluorination due to increased roughness and hydrophilic surface of the silicon substrate.
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