Abstract
The effect of hydrogen peroxide as a novel oxidizing agent on purifying metallurgical grade silicon (MG-Si) by leaching with hydrofluoric acid was investigated as a function of temperature, leaching duration, stirring and hydrofluoric acid concentration. It was found that adding oxidizing agent resulted in enhancing the extraction of impurities from MG-Si as compared to that without oxidizing agent, especially for some non-dissolving elements in the acid like copper. After 2h of leaching MG-Si with an acid mixture composed of 1molL−1 hydrofluoric acid and 2molL−1 hydrogen peroxide, the purity of MG-Si increased from 99.74 to 99.99%, which was higher than 99.97% obtained without hydrogen peroxide addition. Based on cracking shrinking model, the leaching MG-Si with the mixture was under chemical reaction control. Furthermore, to investigate the reaction mechanism on leaching MG-Si, the micro-structural evolutions of MG-Si before and after exposure to each etchants were revealed.
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