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Abstract
Abstract The effects of the preparation layer grown under different conditions, which is an InGaN/GaN SLs structure inserted between the n-GaN layer and the MQWs, on the performance of green-yellow LED have been investigated. In this paper, the quality of InGaN/GaN multiple quantum wells (MQWs) and the optoelectronic properties of LED have been focused on. According to the experimental results, when the growth temperature of GaN barriers in SLs was increased, the interface between InGaN layers and GaN layers became more abrupt, and the indium distribution in the quantum wells became more uniform. In consequence, the forward voltage was reduced, the external quantum efficiency (EQE) was improved. By decreasing the growth rate of the high temperature barriers, the indium uniformity became even better, forward voltage was reduced again and EQE was further improved.
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